WebIRFS640A MOSFET. Datasheet pdf. Equivalent Type Designator: IRFS640A Type of Transistor: MOSFET Type of Control Channel: N -Channel Maximum Power Dissipation (Pd): 43 W Maximum Drain-Source Voltage Vds : 200 V Maximum Gate-Source Voltage Vgs : 30 V Maximum Gate-Threshold Voltage Vgs (th) : 4 V Maximum Drain Current Id : 9.8 A WebIRFS634BT_FP001 datasheet, IRFS634BT_FP001 pdf, IRFS634BT_FP001 data sheet, datasheet, data sheet, pdf, Fairchild Semiconductor, 250V N-Channel B-FET / Substitute of IRFS634 & IRFS634A ... 250V N-Channel B-FET / Substitute of IRFS634 & IRFS634A Others with the same file for datasheet: IRF634B_FP001: Download IRFS634BT_FP001 datasheet …
IRFS634A ON Semiconductor Electronic Components ICs, …
WebIRFS634A Datasheet Advanced Power MOSEFT - Samsung semiconductor isc N-Channel MOSFET Transistor, Inchange Semiconductor Company Limited Electronic Components Datasheet Search English Delete All ON OFF ALLDATASHEET.COM Part No.DescriptionMarking X Match&StartMatchStart withEndIncludedAll Manufacturers All … WebPart: IRFS634A: Category: Description: Advanced Power Moseft: Company: Samsung Semiconductor, Inc. Datasheet: Download IRFS634A Datasheet: Cross ref. Similar parts ... is balogna made of bones
E-Q-0402-1619
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